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| Transistor 2SC3904 Silicon NPN epitaxial planer type For 2GHz band low-noise amplification Unit: mm 2.8 -0.3 +0.2 s Features q q 0.650.15 +0.25 1.5 -0.05 0.650.15 0.95 2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 1.1 -0.1 (Ta=25C) Ratings 15 10 2 65 200 150 -55 ~ +150 Unit V V V mA mW C C 1:Base 2:Emitter 3:Collector JEDEC:TO-236 EIAJ:SC-59 Mini Type Package Marking symbol : 3S s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Transition frequency Collector output capacitance Foward transfer gain Maximum unilateral power gain Noise figure (Ta=25C) Symbol ICBO IEBO hFE fT Cob | S21e |2 GUM NF Conditions VCB = 10V, IE = 0 VEB = 1V, IC = 0 VCE = 8V, IC = 20mA VCE = 8V, IC = 20mA, f = 0.8GHz VCB = 10V, IE = 0, f = 1MHz VCE = 8V, IC = 20mA, f = 1.5GHz VCE = 8V, IC = 20mA, f = 1.5GHz VCE = 8V, IC = 7mA, f = 1.5GHz 7 50 7.0 120 8.5 0.6 9 10 2.2 3 1 min typ max 1 1 300 GHz pF dB dB dB Unit A A 0 to 0.1 0.1 to 0.3 0.40.2 0.8 0.16 -0.06 +0.2 +0.1 0.4 -0.05 +0.1 High transition frequency fT. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.95 2.9 -0.05 1 1.90.2 +0.2 3 1.45 1 Transistor PC -- Ta 240 30 Ta=25C 200 25 IB=250A 100 2SC3904 IC -- VCE 120 VCE=8V IC -- VBE Collector power dissipation PC (mW) Collector current IC (mA) Collector current IC (mA) 160 20 200A 80 Ta=75C 60 25C -25C 120 15 150A 80 10 100A 40 40 5 50A 20 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) 10 3 1 0.3 0.1 0.03 0.01 0.003 0.001 0.1 Ta=75C 25C -25C IC/IB=10 240 hFE -- IC 12 VCE=8V fT -- IC VCB=8V f=1.5GHz Ta=25C Forward current transfer ratio hFE 200 Transition frequency fT (GHz) 10 30 100 10 160 Ta=75C 8 120 25C 80 -25C 40 6 4 2 0.3 1 3 10 30 100 0 0.1 0 0.3 1 3 1 3 10 30 100 Collector current IC (mA) Collector current IC (mA) Collector current IC (mA) Cob -- VCB Collector output capacitance Cob (pF) IE=0 f=1MHz Ta=25C GUM -- IC Maximum unilateral power gain GUM (dB) 12 VCE=8V f=1.5GHz Ta=25C 6 NF -- IC VCE=8V f=1.5GHz Ta=25C 1.2 1.0 10 5 0.8 8 Noise figure NF (dB) 0.3 1 3 10 30 100 4 0.6 6 3 0.4 4 2 0.2 2 1 0 1 3 10 30 100 0 0.1 0 0.1 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Collector current IC (mA) Collector current IC (mA) 2 |
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